雜志介紹

Ieee Journal Of The Electron Devices Society雜志介紹

《Ieee Journal Of The Electron Devices Society》是一本以English為主的開放獲取國際優(yōu)秀期刊，中文名稱IEEE電子器件學會雜志，本刊主要出版、報道工程技術(shù)-ENGINEERING, ELECTRICAL & ELECTRONIC領域的研究動態(tài)以及在該領域取得的各方面的經(jīng)驗和科研成果，介紹該領域有關本專業(yè)的最新進展，探討行業(yè)發(fā)展的思路和方法，以促進學術(shù)信息交流，提高行業(yè)發(fā)展。該刊已被國際權(quán)威數(shù)據(jù)庫SCIE收錄，為該領域相關學科的發(fā)展起到了良好的推動作用，也得到了本專業(yè)人員的廣泛認可。該刊最新影響因子為2，最新CiteScore 指數(shù)為5.2。

本刊近期中國學者發(fā)表的論文主要有：

• Monolithic Dual-Gate E-Mode Device-Based NAND Logic Block for GaN MIS-HEMTs IC Platform

  Author: Zhu, Yuhao; Li, Fan; Cui, Miao; Fang, Zhicheng; Li, Ang; Yang, Dongyi; Zhao, Yinchao; Wen, Huiqing; Liu, Wen

• New Insights Into Noise Characteristics of Hot Carrier Induced Defects in Polysilicon Emitter Bipolar Junction Transistors and SiGe HBTs

  Author: Zhu, Kunfeng; Zhang, Peijian; Xu, Zicheng; Wang, Tao; Yi, Xiaohui; Hong, Min; Yang, Yonghui; Zhang, Guangsheng; Liu, Jian; Wei, Jianan; Pu, Yang; Huang, Dong; Luo, Ting; Chen, Xian; Tang, Xinyue; Tan, Kaizhou; Chen, Wensuo

• Cell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT With Improved Performance Trade-Off

  Author: Zhang, Meng; Zhang, Yamin; Li, Baikui; Feng, Shiwei; Hua, Mengyuan; Tang, Xi; Wei, Jin; Chen, Kevin J.

• Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI pMOSFETs With Al2O3/GeOx Gate Stacks

  Author: Sun, Yu; Schwarzenbach, Walter; Yuan, Sicong; Chen, Zhuo; Yang, Yanbin; Nguyen, Bich-Yen; Gao, Dawei; Zhang, Rui

英文介紹

Ieee Journal Of The Electron Devices Society雜志英文介紹

The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC's, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.